Most MRAMs that are now being developed write data by applying the magnetic field generated by a current running through a wire near a tunneling magnetoresistive element to change the magnetization.
第一代MRAM的数据写入方式主要是向导线中通电使其周围产生磁场，从而改变邻近的存储单元的磁化程度。
Most MRAMs that are now being developed write data by applying the magnetic field generated by a current running through a wire near a tunneling magnetoresistive element to change the magnetization.
第一代MRAM的数据写入方式主要是向导线中通电使其周围产生磁场，从而改变邻近的存储单元的磁化程度。
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