An unified method for converting MOS circuit level description into logic level description is presented.
本文介绍了一种将MOS电路级描述转换成逻辑级描述的统一方法。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
研究了低电压的静电放电(esd)对微电子器件造成的事件相关潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
研究了低电压的静电放电(esd)对微电子器件造成的潜在性失效。
A bootstrap MOS circuit is introduced for bias, which shows a good performance in power supply reject ratio.
偏置电路采用自举基准源，具有良好的电源抑制比。
A new method of measuring the electromotive force of reversible cells using MOS intergrated circuit is presented.
本文介绍一种应用MOS集成电路测量可逆电池电动势的新方法。
The power efficiency of MOS charge pumping circuit is becoming one of the most important issues as the power supply decreasing continuously and the area of a chip.
随着电源电压的不断降低和芯片面积的不断减小，电荷泵的效率已成为MOS电荷泵电路设计过程中最为人们关心的问题之一。
A study was carried out on three-level circuit, MOS in parallel etc.
对三电平电路、MOS管并联等进行了研究。
Four modules are included in the SPDT analog switch, for example, MOS switch circuit, driver circuit, buffer circuit, and ESD protection circuit.
单刀双掷模拟开关电路的设计包括四个模块：MOS开关电路、驱动电路、缓冲电路和ESD保护电路。
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
In the article, we make a parasitic substrate model on the existing MOS model, and use this model to do simulation for each single MOS, accumulated effect circuit and some useful analog circuit.
在文章中，我们在现有的MOS器件模型的基础上再组建一个寄生的衬底模型，然后利用此模型逐一对单个MOS器件，具有累积效应的数字电路和部分基本模拟电路进行了仿真实验和分析。
The principle of sub-threshold MOS peak detector is stated and the circuit is implemented.
先介绍了亚阈值MOS管峰值检测器的工作原理，并进行了电路实现。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
Full-differential structure and bottom plane sampling technique and optimization of switch capacitor and MOS switch were used in this circuit.
设计中采用全差分结构和底极板采样技术，优化了开关电容和MOS开关。
Its floating output is referenced to a floating rail with offset capability up to 500V. The hybrid circuit designed to drive MOS-gated devices is more effective and lower cost thanIR2110.
设计了一种厚膜驱动电路，除与IR2110的基本功能相同以外，还具有简单、经济、实用的特点。
Its floating output is referenced to a floating rail with offset capability up to 500V. The hybrid circuit designed to drive MOS-gated devices is more effective and lower cost thanIR2110.
设计了一种厚膜驱动电路，除与IR2110的基本功能相同以外，还具有简单、经济、实用的特点。
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