Therefore, LDMOS model is of great significance.
因此，对LDMOS模型的研究意义重大。
The process for this new structure is compatible with the normal P type LDMOS.
根据以上结构制定新工艺，该工艺与常规P型LDMOS兼容。
The output characteristics of the RF power LDMOS are greatly affected by the parasitic capacitance.
射频功率LDMOS的寄生电容直接影响器件的输出特性。
The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof.
本发明提供了一种可提高击穿电压的LDMOS器件及其制造方法。
The compatibility of BCD process integration was discussed. We focused on the principle and concerns on LDMOS technology.
对BCD工艺兼容性进行了说明，着重阐述了LDMOS的工艺原理和关键工艺设计考虑。
The new devices have twice the RF bandwidth of LDMOS, so that one power amplifier (PA) can support multiple operating frequencies.
新的设备具有的LDMOS的射频带宽的两倍，这样，一个功率放大器（PA）的可支持多个工作频率。
Testing MOS transistors including high voltage LDMOS and low voltage MOS after the process experiment, then analyze the results of test.
测试了工艺流片实验后MOS器件的性能，并对测试结果进行分析。
Besides, CMOS flow is also used in LDMOS manufacturing, the corresponding protection device development is also a part of work in this paper.
另外，利用现有CMOS工艺制造的传统LDMOS工作，配合该电路的保护工作也是本文工作的一部分。
LDMOS is also widely used in the field of large area flat panel displays and automotive electronics as a high-voltage power amplifier devices.
而作为高压功率放大器件，在各种大面积平板显示屏和汽车电子领域也得到广泛应用。
Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.
基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
Image method is proposed to calculate the two-dimensional temperature distribution of LDMOS. Its calculation results can be used to develop an accurate thermal model.
本文提出采用镜像方法计算LDMOS器件的二维温度分布，此计算结果可用于开发精确的器件热模型。
In the prior art, the requirement of further improving LDMOS breakdown voltage can not be satisfied by only using the LDMOS self structure to conform to an RESURF principle singly.
现有技术中仅利用LDMOS本身的结构来单次符合RESURF原理无法满足进一步提高LDMOS击穿电压的需求。
The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.
LDMOS电流特性的研究涉及了器件电流线性区、夹断饱和区和准饱和区，并给出了简化的电流特性解析表达式。
A variety of methods are employed to solve Poisson equation when discussing on the surface potential and surface electric field models of LDMOS with different structures in this paper.
在讨论不同结构的LDMOS表面势和表面电场模型时，本文采用多种方法求解泊松方程。
For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.
对于隔离的LDMOS器件，横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少，从而减少了衬底注入电流。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
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