The electrodes, insulator layer and FEA layer are fabricated by sputtering.
通过溅射的办法制备了各层电极、绝缘层以及FEA电阻层。
Base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层ꢃ-在绝缘层下部的晶圆片，是顶部硅层的基础。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
That was followed by a layer of plastic insulator, and another layer of gold.
然后在其上覆盖一层塑料绝缘膜，以及另一层黄金薄膜。
The aluminum surface of the oxide layer is an electrical insulator.
铝表面的氧化层是一种电的绝缘体。
Usually, the first layer is of silicon oxide, an insulator, which is etched to a desired thickness.
通常，第一层为氧化硅，绝缘体，其被蚀刻至所需的厚度。
In order to reduce the expansion stress resulting from cement's expansion and prolong the life-span of porcelain insulator, a thin asphalt buffer layer is coated between the porcelain and the cement.
为了降低水泥膨胀所引起的膨胀应力，延长瓷绝缘子的使用寿命，在胶装时一般在瓷体和水泥之间涂一层沥青缓冲层。
The semiconductor layer and intermediate insulator of the SOI are etched in crossed region of the flexible beam cross and in a looped region above the support body.
在柔性梁的交叉区域中和在支撑体的上方的环形区域中对SOI的半导体层和中间绝缘层进行蚀刻。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
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