The electrodes, insulator layer and FEA layer are fabricated by sputtering.
通过溅射的办法制备了各层电极、绝缘层以及FEA电阻层。
Base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层ꢃ-在绝缘层下部的晶圆片，是顶部硅层的基础。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
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