A new method for impurity doping of semiconductor has been developed.
本文提出了一种新的半导体掺杂方法。
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加，中性杂质散射作用增强。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.
但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度，同时过量的掺杂也会影响薄膜的结晶性能。
But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.
但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度，同时过量的掺杂也会影响薄膜的结晶性能。
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