导带 价带 P 电子能量 电洞 能量 半导体掺杂(impurity doping) 因为半导体的键能小，因此，容易被打断而置 换成其他元素，此一过程称为掺杂(doping)， 所加入元素称为dopants。
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In order to know if this technique is also suitable for impurity doping,Wolfram is doping into the film and obtained a good effect. A effective doping technique was obtained through analyzing.
同时为了证明这种制备工艺对掺杂有效,我们用金属钨对薄膜进行掺杂实验,获得了较好的效果,同时通过分析得出了一些有意义的掺杂手段。
参考来源 - 空气氧化法制备VO·2,447,543篇论文数据，部分数据来源于NoteExpress
A new method for impurity doping of semiconductor has been developed.
本文提出了一种新的半导体掺杂方法。
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加，中性杂质散射作用增强。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
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