The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements, remelted and elastic distortion with a high density dislocation.
结果表明：电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成；
The possibility of the stimulated radiation at the low atomic density is demonstrated, and the possibility of impurity examination by means of stimulated radiation signals is estimated.
证实了在低原子浓度下探测受激辐射的可能性，并估计了用受激辐射信号检测杂质的可能性。
The radiated power of impurity ions varying with time and electron temperature for given the profiles of electron temperature and density is calculated, and the corresponding physics is discussed.
在给定电子温度和密度剖面下，给出了杂质离子辐射率随时间和电子温度变化的计算结果，并讨论了相关物理过程。
Removing process of light and soft impurity that is medium and low density is introduced.
介绍了煤中低密度轻软杂质清除的工艺过程。
The results of the molecular beam injection show that the impurity have been decreased, the electron density have been increases, and the plasma confinement property was improved.
分子束注入减小了杂质辐射，有效地提高了电子密度，改善了等离子体的约束性能。
During the impurity radiation, the density perturbation driven by density gradient couples with the temperature one and then affects the electrostatic potential one.
电子密度梯度直接影响密度涨落，并通过杂质辐射与温度涨落相互耦合，进而影响静电势涨落。
The influences of the storage temperature, atmosphere and impurity of the high-density fuel HDF-1 on the formation of peroxide in the fuel are studied by accelerating oxidation at high temperature.
研究了在升温加速氧化条件下高密度燃料HDF - 1的储存温度、气氛和燃料纯度对过氧化物生成量的影响。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
But too high thickness and high density of tin films will do harm to the smoothness of film surface with impurity deteriorating the crystallization.
但是薄膜厚度的增大和浓度的提高会恶化膜面的平整度，也会影响薄膜的结晶性能。
But too high thickness and high density of tin films will do harm to the smoothness of film surface with impurity deteriorating the crystallization.
但是薄膜厚度的增大和浓度的提高会恶化膜面的平整度，也会影响薄膜的结晶性能。
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