In the framework of the colloidal chemistry approach, high quality nanocrystals of different II-VI and III-V semiconductor materials can now be obtained.
在胶体化学进展的框架下，现已获得不同II-VI型和III-V型半导体材料的高质量纳米晶。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
The results of this work show that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications,’’ according to the firm.
本文显示立体型多栅结构可有效提升低功耗逻辑用III-V族QWFET管子的尺寸缩微能力。
Alex V. Castro III, executive director of the infant Pediatric Nutrition association of the Philippines that groups infant formula makers, said the association fully supports breast-feeding.
菲律宾婴儿儿科营养学会对婴儿配方奶粉制造商进行分类，这个组织的常务董事亚历克斯·卡斯特罗三世说，该学会完全支持母乳喂养。
Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
晶圆片搀杂剂可以在元素周期表的III和V族元素中发现。
Advances in the oxidation of alcohol promoted by I (III) and I (v) reagents are reviewed and the relevant mechanisms are discussed as well.
概括了几种常用的三价和五价碘试剂作为氧化剂氧化醇的研究进展，并对相应的氧化机制进行了探讨。
In some areas of the trough basin, sequence V, which is residual Miocene sediments, deposited beneath the sequence III.
盆地内某些区域，在层序iii之下，还存在层序v，为残留的中新世沉积物。
The interstitial atoms of gold diffuse into silicon at a rate several orders of magnitude faster than the group III and V impurities.
金的填隙原子向硅扩散的速率比III族和v族杂质快几个数量级。
The article discusses at length Parts III, IV, V and VI of the newly formulated Syllabus for English Majors in China.
本文较详细地介绍了《高等学校英语专业英语教学大纲》中的三、四、五、六部分。
Pharmaceutical compositions containing sertraline hydrochloride Forms II, III and V through X, the methods of treatment using such pharmaceutical compositions are also disclosed.
也公开了含有盐酸舍曲林晶形II、III和V -X的药物组合物，和应用上述药物组合物治疗的方法。
Parts III through V focus on how we can write our own types.
第三到第五部分着重讨论如何编写自己的类型。
Dostoyevsky. Crime and Punishment. Part III, 4-end, Part IV, Part V.
杜思托也夫斯基《罪与罚》卷三完、卷四、卷五。
Part III, is made of Chapter IV and Chapter V.
第三部分，即文章的第四章和第五章。
Part III, is made of Chapter IV and Chapter V.
第三部分，即文章的第四章和第五章。
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