Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
The results of this work show that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications,’’ according to the firm.
本文显示立体型多栅结构可有效提升低功耗逻辑用III-V族QWFET管子的尺寸缩微能力。
In the framework of the colloidal chemistry approach, high quality nanocrystals of different II-VI and III-V semiconductor materials can now be obtained.
在胶体化学进展的框架下，现已获得不同II-VI型和III-V型半导体材料的高质量纳米晶。
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