The drive force of phase change for HgCdTe growth during recrystallization is briefly described.
简述了再结晶过程中晶粒长大的相变驱动力。
The result shows that the MSA is a technique suitable for distinguishing above both HgCdTe materials.
结果表明，利用迁移率谱技术可以很好地区分这两种碲镉汞材料。
The monolithic integration and hybrid integration technology used for HgCdTe infrared detector is researched.
介绍了单片集成硅光接收器的研究背景，阐述了硅光电探测器的工作机理。
Fabrication of mercury cadmium telluride (HgCdTe) devices has always been a challenging task due to sensitive nature of the material.
由于材料性质比较敏感，碲镉汞探测器的制备一直是一项具有挑战性的任务。
While in HgCdTe with high dislocation density, the arsenic distribution is complex, exhibiting multi component exponential distribution.
而在缺陷密度比较大的碲镉汞材料中，砷的分布呈多段指数型分布，表现出更复杂的多机制扩散特性。
The study of the infrared focal plane array based on the narrow gap semiconductors HgCdTe is a hot topic in the field of advanced infrared optoelectronics.
窄禁带半导体碲镉汞红外焦平面列阵研究是当代红外光电子技术的前沿。
This paper reports the progress of the project: fundamental research for application of the physics of optoelectronics on HgCdTe infrared focal plane array.
本文介绍了中科院“九五”基础性研究重大项目“碲镉汞红外焦平面光电子物理的应用基础研究”的进展情况。
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples.
利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。
According to package characteristics of long linear HgCdTe IRFPA detector, difficulties of the metal split micro dewar manufacture are discussed in the paper.
针对长线列碲镉汞红外焦平面探测器封装的特点，文章讨论了分置式微型杜瓦研制的难点。
In this system, the signal from the HgCdTe detector amplifier is directly put into A/D interface of a computer, thus making the system keep a higher resolution.
该系统将经过放大的碲镉汞红外元件输出的图象电压直接迭计算机，保持了较高的温度分辨率；
Finally, the transverse and longitudinal compositional uniformity of HgCdTe is analyzed by ellipsometric measurement which is a nondestructive, effective and r.
最后用椭圆偏振测量的方法分析了碲镉汞的横向和纵向组分均匀性。
An data-processing method was developed to obtain the device parameters from the resistance-voltage(R-V) characteristics measured in long-wavelength HgCdTe photodiode.
报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压（R-V）曲线提取器件基本特征参数的数据处理途径。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
应用推荐