The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应(hce)进行了研究。
The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.
通过对这些失效因素的研究并通过一定的再设计手段，可以减少热载流子效应导致的器件退化。
Amber HCE-relay. Miniature relay for wide applications. 1 form C. Coil voltage 240 V AC. Light emitting diode wired, plug-in. Standard type.
琥珀HCE -继电器。继电器广泛的应用。1表C线圈电压240伏交流电。有线发光二极管，插件。标准型。
Objective: To discuss and evaluate the indications and efficacy of the various surgical treatment manners for hepatic cystic echinococcosis (HCE).
目的：探讨肝囊型包虫病手术治疗的各种方式及其适应症和疗效。
These methods are validated with reliability simulation software and are useful for improving the HCE performance of CMOS digital integrate circuit.
通过可靠性模拟软件验证这些方法，为CMOS数字电路提高抗热载流子能力提供了参考。
Objective:To analyze and approach the impacted factors of gallbladder complications of patients with the recurrence of hepatic cyst echinococcosis(HCE).
目的：分析、探讨肝囊性包虫术后复发患者胆囊并发症的影响因素。
The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。
The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。
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