Based on simulation, the characteristics and mechanisms of failure on a deep sub-micron grounded-gate NMOS (GGNMOS) are studied under TLP (transmission line pulse) stress.
对TLP(传输线脉冲)应力下深亚微米ggnmos器件的特性和失效机理进行了仿真研究。
Based on simulation, the characteristics and mechanisms of failure on a deep sub-micron grounded-gate NMOS (GGNMOS) are studied under TLP (transmission line pulse) stress.
对TLP(传输线脉冲)应力下深亚微米ggnmos器件的特性和失效机理进行了仿真研究。
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