Their Fermi levels moved upward as the defect states were filled by light generated carriers. As a result, their activation energies decreased.
光照时电导率增加，光注入后因光生载流子对缺陷态的填充使费米能级上移，从而使激活能减小；
Their Fermi levels moved upward as the defect states were filled by light generated carriers. As a result, their activation energies decreased.
光照时电导率增加，光注入后因光生载流子对缺陷态的填充使费米能级上移，从而使激活能减小；
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