The paper presents a new PWM CSI using only one gate turn off switch and six thyristors. The converter uses active commutation to realize PWM in a conventional thyristor-based CSI.
该文提出一种采用一个门极可关断开关和六个晶闸管的新的PWM电流源逆变器，此电路通过有源换流来实现传统的晶闸管CSI的脉宽调制。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
Additional features include: programmable transition delay, low quiescent current, higher efficiency at light loads, and high speed control to quickly turn off both gate drivers.
其它附加功能包括：可编程跳变延时、低静态电流、在轻载时提供更高的效率，以及快速关断两个驱动器的高速控制。
The GTO drive source of the power stepping motor is made up of the new-type of switching elements—the Gate turn-off Controlled Rectifier (GTO).
功率步进电机的GTO驱动电源，采用了新型开关元件“可关断可控硅”（简称GTO）。
We researched mainly on Gate Turn-off Thyristor in qualitative analysis before.
以往对门极可关断晶闸管电流放大系数的研究主要集中在定性分析。
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter.
通过设置死区时间实现开关功率器件的零电压开通与关断，利用该变换器研制出GTO门极驱动用电源。
Compared with other power device, it has many merits, such as high switch speed, convenient to turn-off by control of gate bias.
与其他种类的功率开关器件相比，具有开关速度快，易于实现栅控关断等优点。
Gate Turn-Off Thyristor is a kind of power electronic element. It can control both on and off.
GTO是一种既能控制导通，又能控制关断的全控型电力电子元件。
Gate Turn-Off Thyristor is a kind of power electronic element. It can control both on and off.
GTO是一种既能控制导通，又能控制关断的全控型电力电子元件。
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