Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
Said doping gas control part includes a gas quality flowmeter (of argon and azote) used by a gas protect part, and a doping case part.
所述的掺杂气体控制部分包气体保护部分使用的氩气、氮气的气体质量流量计及掺杂箱部分；
A colorless, spontaneously flammable poisonous gas, PH3, having a fishy odor and used as a doping agent for solid-state components.
磷化氢，三氢化磷一种无色的、易自燃的有毒气体，ph3，有象鱼的气味，可用作。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
The device includes a central control part, a motor control part, a control panel and a doping gas control part.
它包括中心控制部分、电机控制部分、控制面板、及掺杂气体控制部分；
Moreover, The paper sums up the present situation of study on pressure distribution and doping gas, etc.
也从阶梯面的压力分布、掺气特点等方面概述了国内外对阶梯坝水力特性的研究现状。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
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