Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
Moreover, The paper sums up the present situation of study on pressure distribution and doping gas, etc.
也从阶梯面的压力分布、掺气特点等方面概述了国内外对阶梯坝水力特性的研究现状。
Moreover, The paper sums up the present situation of study on pressure distribution and doping gas, etc.
也从阶梯面的压力分布、掺气特点等方面概述了国内外对阶梯坝水力特性的研究现状。
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