A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been proposed. The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.
该文提出了多晶硅薄膜晶体管的一种Halo LDD新结构,Halo LDD结构能够有效地抑制短沟道效应,合理的Halo区掺杂分布会极大地改善小尺寸器件性能。
参考来源 - Halo LDD P·2,447,543篇论文数据,部分数据来源于NoteExpress
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