The experimental results show that not only space charge injection but its detrapping also makes samples breakdown.

结果表明，电介质的击穿并不总是发生在电荷的注入过程中，也可以发生在空间电荷的脱阱过程中。

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Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。

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Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。

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