Detrapping current 解俘获电流
The experimental results show that not only space charge injection but its detrapping also makes samples breakdown.
结果表明，电介质的击穿并不总是发生在电荷的注入过程中，也可以发生在空间电荷的脱阱过程中。
Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
应用推荐