B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
Diamond film wafers with different thickness were prepared by high power DC arc plasma jet CVD method.
采用高功率直流电弧等离子体cvd工艺制备了不同厚度的无裂纹自支撑金刚石厚膜。
Currently, CVD method is a widely used method of fabrication, due to its low demand in equipment, simple operation and low cost.
由于CVD法对设备要求低，操作简单，成本低，是目前广泛采用的制备方法。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
Microstructure and growth mode of diamond films by electron assisted CVD method have been studied by means of transmission electron microscopy.
本工作利用透射电镜对电子束增强热丝化学汽相沉积金刚石薄膜的微观结构及生长方式进行了研究。
The view point of oxidation (composing) and reduction (decomposing) can not only explain the creation of natural diamond but also diamond conversion mechanisms such static synthesis CVD method etc.
氧化(化合)—还原(分解)的论点，不仅解释天然金刚石的生成，也可解释静压合成、气相法等多种方法中金刚石的转化机理。
In this dissertation, Freestanding Thick Diamond films (FTDF) prepared by CVD method are applied as substrates of piezoelectric materials and the piezoelectric films are investigated systematically.
本文以CVD方法制备的自持金刚石厚膜为基片，沉积压电薄膜并系统研究了压电薄膜的各项性能。
Since carbon nanotubes (CNTs) have been discovered in 1991, they are mainly produced by arc-discharge evaporation and Chemical vapor Deposition (CVD) method.
纳米碳管自1991年被发现以来，目前主要的制备方法有电弧法和化学气相沉积(cvd)法。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
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