Thesensor is fabricated by the conventional CMOS process.
该传感器由通用的CMOS工艺制成。
An ESD protection circuit for IC CARDS is described, which is based on CMOS process.
介绍了ESD保护结构的基本原理，并提出一个基于CMOS工艺用于IC卡芯片的保护电路。
MEMS devices with minimum volume and cost were realized by the embedded CMOS process.
通过这种嵌入式CMOS工艺技术，可以实现具备最小体积、最低成本的MEMS器件。
This circuit structure is simple and can be realized by the standard CMOS process easily.
该电路结构简单，易于实现，且制作工艺与标准CMOS工艺完全兼容。
The inductor and capacitor in CMOS process is an important issue in designing LNA and VCO.
CMOS工艺的电容和电感是设计lna、VCO等射频电路需要考虑的重要问题。
The high-voltage CMOS process used to fabricate this device also means it can endure voltage surges up to 30V.
用于制造这种装置的高压CMOS工艺也意味着它可以承受浪涌电压高达30V。
We analyze several CMOS process compatible photodetectors which are promising to be applied to the VSR receiver.
分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。
The design of the tungsten micro-hotplate can be applied to other thermal-based sensors in the standard CMOS process.
本文的钨微热板的设计可以应用到相关的与标准CMOS工艺兼容的热传感器的设计之中。
To reduce the cost, the CMOS process was adopted. This paper introduces each module, especially bandgap and watchdog.
本文分别对系统中各个模块做了介绍，特别介绍了带隙基准电压源和看门狗这两个重点模块。
The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.
还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论。
With the downscaling of CMOS process and reduction of voltage supply, it is more difficult to design high-gain OPAMPs than before.
随着CMOS工艺中单管特征尺寸和电源电压的下降，设计高增益运算放大器很困难。
The simulating results have proved that the designed circuit has good characteristics. The circuit realized with the standard CMOS process has higher practical value.
仿真结果验证了电路具有良好特性，该电路采用标准CMOS工艺实现，具有较高的实用价值。
The research on the circuit structure and the process technique is carried out to satisfy the demands, especially, the investigation on the ADC manufactured with standard CMOS process.
为了满足这些需求，需要在电路结构和工艺技术方面进行不断的研究，特别是应用标准CMOS工艺来制造这种ADC。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
It combines a low cost, high speed CMOS process and a novel architecture to achieve the resolution and speed of existing hybrid implementations at a fraction of the power consumption and cost.
它采用高速、低成本的CMOS工艺及新颖的架构，分辨率和速度均达到现有混合方案的水平，而功耗与成本却低得多。
The nano electronic part and the production method thereof have the advantages of simplicity, stability, reliability, fewer process procedures and compatibility with the traditional CMOS process.
这种纳米电子器件及其制造方法具有简单、稳定可靠、工艺步骤少、与传统CMOS工艺兼容的优点。
Circuits of CMOS-process-compatible monolithic photoreceivers are designed. The circuits include photodetector, pre-amplifier and main amplifier.
设计了与CMOS工艺兼容的光电单片接收机电路，其中包括光电探测器、前置放大器和主放大器。
Circuits of CMOS-process-compatible monolithic photoreceivers are designed. The circuits include photodetector, pre-amplifier and main amplifier.
设计了与CMOS工艺兼容的光电单片接收机电路，其中包括光电探测器、前置放大器和主放大器。
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