Thesensor is fabricated by the conventional CMOS process.
该传感器由通用的CMOS工艺制成。
An ESD protection circuit for IC CARDS is described, which is based on CMOS process.
介绍了ESD保护结构的基本原理，并提出一个基于CMOS工艺用于IC卡芯片的保护电路。
MEMS devices with minimum volume and cost were realized by the embedded CMOS process.
通过这种嵌入式CMOS工艺技术，可以实现具备最小体积、最低成本的MEMS器件。
The inductor and capacitor in CMOS process is an important issue in designing LNA and VCO.
CMOS工艺的电容和电感是设计lna、VCO等射频电路需要考虑的重要问题。
To fabricate the ESD protection circuits without adding extra steps or masks into the CMOS process.
另外，在一些前人设计的ESD防护电路中，尤其是在。
The high-voltage CMOS process used to fabricate this device also means it can endure voltage surges up to 30V.
用于制造这种装置的高压CMOS工艺也意味着它可以承受浪涌电压高达30V。
We analyze several CMOS process compatible photodetectors which are promising to be applied to the VSR receiver.
分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。
The design of the tungsten micro-hotplate can be applied to other thermal-based sensors in the standard CMOS process.
本文的钨微热板的设计可以应用到相关的与标准CMOS工艺兼容的热传感器的设计之中。
To reduce the cost, the CMOS process was adopted. This paper introduces each module, especially bandgap and watchdog.
本文分别对系统中各个模块做了介绍，特别介绍了带隙基准电压源和看门狗这两个重点模块。
A new type of electrical leakage protection chip implemented in the digital analog mixed-signal CMOS process is represented.
利用数模混合信号CMOS工艺实现了一种新型漏电开关保护器芯片。
The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.
还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论。
With the downscaling of CMOS process and reduction of voltage supply, it is more difficult to design high-gain OPAMPs than before.
随着CMOS工艺中单管特征尺寸和电源电压的下降，设计高增益运算放大器很困难。
We use the thermal sensing circuit to replace the special material in antenna coupled bolometer in other process which the CMOS process does not provide.
会使用温测电路的原因为CMOS制程并没有其他制程的天线耦合辐射热计所需要的特殊材料。
Recently, with the continual progress in CMOS process and an explosive growth in wireless communications, it has made the research on RFIC become the hotspot.
近年来，随着CMOS工艺的不断进步，以及无线通信系统的蓬勃发展，使得射频集成电路成为了研究热点。
The simulating results have proved that the designed circuit has good characteristics. The circuit realized with the standard CMOS process has higher practical value.
仿真结果验证了电路具有良好特性，该电路采用标准CMOS工艺实现，具有较高的实用价值。
It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet is inherently rad-hard making it an ideal process for demanding space applications.
该技术将射频、混合信号和具有数字能力的任何其他CMOS工艺相混合，同时其固有的抗辐照能力，这使其成为空间应用场合的理想工艺。
The research on the circuit structure and the process technique is carried out to satisfy the demands, especially, the investigation on the ADC manufactured with standard CMOS process.
为了满足这些需求，需要在电路结构和工艺技术方面进行不断的研究，特别是应用标准CMOS工艺来制造这种ADC。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
It combines a low cost, high speed CMOS process and a novel architecture to achieve the resolution and speed of existing hybrid implementations at a fraction of the power consumption and cost.
它采用高速、低成本的CMOS工艺及新颖的架构，分辨率和速度均达到现有混合方案的水平，而功耗与成本却低得多。
Easily integrated into designs implemented in X-FAB's modular XH018 and XH035 CMOS process technologies, these new diodes provide the highest quantum efficiency available from a silicon foundry.
轻松集成到X -FAB的模块化XH018和XH035CMOS工艺技术实现的设计，这些新二极管提供最高量子效率可以从晶圆代工。
The nano electronic part and the production method thereof have the advantages of simplicity, stability, reliability, fewer process procedures and compatibility with the traditional CMOS process.
这种纳米电子器件及其制造方法具有简单、稳定可靠、工艺步骤少、与传统CMOS工艺兼容的优点。
The symmetric ternary current-mode CMOS circuits designed by using this theory not only have simpler circuit structures and correct logic functions, but also can process two-way signal.
应用该理论设计的对称三值电流型CMOS电路不仅具有简单的电路结构和正确的逻辑功能，而且能处理具有双向特性的信号。
Samsung Electronics Co. Ltd., one of the members of IBM's "fab club" or technology alliance, recently rolled out its 20-nm process, which is based on bulk CMOS.
而IBM芯片制造技术联盟中的另一个重要成员三星则最近公布了其20nm制程技术的有关消息，这种制程技术也是基于平面型体硅CMOS。
CCD and CMOS image sensors each have strengths and weaknesses coming from their architecture or their fabrication process.
CCD与CMOS图像传感器由于结构和制造过程的不同而存在各自的优势与劣势。
This paper presents a method integrating the ISFET and signal process circuit realized in an standard CMOS technology;
本文设计提出了一种基于标准CMOS技术实现ISFET与信号处理电路集成化的设计方法；
And it is a type of integrated circuit produced by CMOS technology, which can process digital -analog mix signals.
它是采用CMOS工艺制成的数字-模拟混合信号处理集成电路，是一种颇具发展前景的新型电子器件。
In this system, a CMOS image sensor system which developed by ourselves is used for video capturing. Also we describe the full process of the image capturing and image processing.
提出了一种利用自主开发的CMOS图像传感器系统在显微镜上对细胞图像的视频采集、图像捕捉以及图像处理的新方法。
The CMOS image sensor saves the process cost, improves the process yield and has better absorption efficiency on light with various wavelengths.
所述CMOS图像传感器节约了工艺成本，提高了工艺良率，且对于各个波长的光都具有更好的吸收效率。
The CMOS image sensor saves the process cost, improves the process yield and has better absorption efficiency on light with various wavelengths.
所述CMOS图像传感器节约了工艺成本，提高了工艺良率，且对于各个波长的光都具有更好的吸收效率。
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