A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路，以期达到最快的存取时间。
This paper introduced the realization procedure of IDD spectrum graphics. Test and experiment data proved that CMOS memory IDD spectrum graphics test is work.
通过对CM OS存储器idd频谱图形测试过程的介绍，测试及试验数据证实CM OS存储器idd频谱图：形测试是可行的。
Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.
通常来说，这种内存都称为CMOS，尽管它们并非严格要求使用这种技术来实现。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
Use CPLD to control the CMOS image sensor and the flash storage memory to record the image in the image record part.
其中图像摄取部分采用CPLD控制CMOS图像传感器采集图像，并把图像数据存入大容量闪速存储器。
SONOS flash memory has numerous advantages, such as excellent salability, high endurance, low power, radiation hardness, and is highly compatible with standard CMOS technologies.
SONOS闪存拥有许多优势，如极好的销路、高持久性、低动力支持、辐射硬度和拥有标准CMOS技术的高压缩性。
Micron is one of the world's largest companies focused on memory, storage and imaging semiconductor products-from DRAM to NAND Flash to CMOS image sensors.
美光科技有限公司是全球最大的半导体存储及影像产品制造商之一，其主要产品包括DRAM、NAND闪存和CMOS影像传感器。
In this paper, two kinds of standards CMOS technology memory cell structure are introduced.
本文提出了两种基于标准CMOS工艺的存储单元结构。
In this paper, two kinds of standards CMOS technology memory cell structure are introduced.
本文提出了两种基于标准CMOS工艺的存储单元结构。
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