CMOS memory evoiution 互补金属氧化半导体记忆演变
·2,447,543篇论文数据,部分数据来源于NoteExpress
A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路,以期达到最快的存取时间。
Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.
通常来说,这种内存都称为CMOS,尽管它们并非严格要求使用这种技术来实现。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题,它利用标准CMOS晶体管来实现非易失性存储器,这样就不需要额外的掩膜或工艺步骤。
应用推荐