Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.
本文首先详细介绍了分子束外延设备的原理和构造。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
In addition, such preparation methods as molecular beam epitaxy and laser ablation also see some applications.
此外，分子束外延生长、激光消融等制备方法也有一定的应用。
The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
本文报道了金属有机源分子束外延设备的设计方案和技术特点。
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community.
瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
In this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.
本文报道了一台用于物理研究的分子束外延模拟实验装置的设计和调试。
These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.
这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。
These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.
这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。
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