采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
采用扫描透射电镜（STEM） ，研究了铝上磁控溅射沉积铀薄膜的形貌、组织、结构以及铀薄膜的生长模型。
Model of growth, surface morphology, microstructure and of the Uraniun films by magnetron sputter deposition have been investigated by scanning transmission electron microscopy(STEM).
用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
以磁控溅射沉积方法，采用循环氩离子轰击镀和未循环轰击镀工艺在金属铀上制备了铝薄膜。
Aluminum film on uranium is prepared using magnetron sputtering with and without circulated argon ion bombardment process.
对铀表面磁控溅射沉积铝镀层的热应力进行了热弹塑性有限元分析。
The thermal stress in magnetron sputtered al coating on uranium substrate was studied by thermal elastic plastic finite element method (FEM).
使用V形槽工艺，用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区，简化了工艺流程，使器件在调试过程中具有很大灵活性。
The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
磁控溅射离子镀铝膜不是简单的单质外接铝膜，而是铝和铁组成的合金膜。
The magnetron-sputtering ion plated aluminium film is not simply a circumscribed coating of a single element, but of an alloy consisting of both aluminium and iron.
磁控溅射离子镀铝膜不是简单的单质外接铝膜，而是铜和铝组成的合金膜。
The magnetron-sputtering ion plating aluminum film is not simply an out- covering layer of a single substance, but an alloy film containing both aluminum and copper.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
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