分析认为该电导出现极值的现象是因为高温晶格氧析出导致样品空穴载流子浓度降低所致。
This change is attributed to the hole carrier concentration decreasing with lattice oxygen releasing supported by iodic titration result.
这一设计包含了一条足够细的隧道，当它关闭时，里面完全没有载流子(电子或空穴)，当它打开时，里面便充满了载流子，起到了阀门的作用。
The design incorporates a channel thin enough to become entirely devoid of carriers (ie, free electrons or holes) when switched off, thus acting as a valve, yet full of them when switched on.
计算结果表明，发射区载流子寿命的变化几乎不影响注入到基区的电子电流，但却成反比例地影响基区空穴电流。
The calculated results show that the electron current injected into the base region is not affected, but an increase of the base hole current is increased with the lifetime reduction.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒。
Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
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