分析认为该电导出现极值的现象是因为高温晶格氧析出导致样品空穴载流子浓度降低所致。
This change is attributed to the hole carrier concentration decreasing with lattice oxygen releasing supported by iodic titration result.
这一设计包含了一条足够细的隧道，当它关闭时，里面完全没有载流子(电子或空穴)，当它打开时，里面便充满了载流子，起到了阀门的作用。
The design incorporates a channel thin enough to become entirely devoid of carriers (ie, free electrons or holes) when switched off, thus acting as a valve, yet full of them when switched on.
计算结果表明，发射区载流子寿命的变化几乎不影响注入到基区的电子电流，但却成反比例地影响基区空穴电流。
The calculated results show that the electron current injected into the base region is not affected, but an increase of the base hole current is increased with the lifetime reduction.
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