对使用磁控溅射法沉积的钨薄膜进行了热退火研究。
We employ the magnetic sputtering method to deposit amorphous tungsten films and investigate their thermal annealing process.
通过磁控溅射法制备了锑基铋掺杂超分辨掩膜材料。
Antimony-based bismuth-doped thin film, a new kind of super-resolution mask layer, is prepared by magnetron sputtering.
用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
采用磁控溅射法制备锰铜薄膜，溅射和真空蒸发法制备镱薄膜。
Thin film manganin gages and ytterbium gages were fabricated by magnetron sputtering.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
获得了直流磁控溅射法制备具有良好光电特性的ZMO薄膜的最佳工艺条件；
The experimental condition of DC magnetron sputtering for ZMO films with good optical and electric properties has been established.
着重讨论了电子束蒸镀法与磁控溅射法的区别以及电子束蒸镀法的各种影响因素。
Focused on the distinguish of electron beam vapour deposition and magnetron sputtering, and the impact of various factors of electron beam vapour deposition.
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟（IWO）透明导电氧化物薄膜。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
采用射频磁控溅射法沉积了CN薄膜，利用XPS,XRD,FTIR等测试手段研究了CN薄膜的成分和结构。
CN films were deposited by radio frequency sputtering technique and the composition and structure of it were investigated by means of XPS, XRD and FTIR.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
本文采用反应磁控溅射法和溶胶凝胶法制备了均匀致密的三氧化钨薄膜材料，对它的光学性质、表面形态、结构等进行了深入的研究。
The effects of low-power(LP) buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated.
本文采用反应磁控溅射法和溶胶凝胶法制备了均匀致密的三氧化钨薄膜材料，对它的光学性质、表面形态、结构等进行了深入的研究。
The effects of low-power(LP) buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated.
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