在本文中主要开展了硼掺杂金刚石薄膜的电化学性能及在污水处理中的应用研究。
The electrochemical properties of boron-doped diamond (BDD) thin film electrodes films and their applications to wastewater treatment have been investigated.
以硼掺杂金刚石薄膜（BDD）为电极，采用电化学氧化的方法对含氯酚废水进行实验研究。
The electrochemical oxidation of wastewater containing chlorophenols was investigated experimentally using synthetic boron-doped diamond(BDD) thin film electrodes.
本文采用微波等离子体cvd法制备定向生长的金刚石薄膜。用冷离子注入法对金刚石薄膜进行硼掺杂。
The diamond films were fabricated by microwave plasma CVD and the boron-doped was created by the cold ion implantation.
本发明属于环境监测技术领域，涉及一种基于硼掺杂金刚石膜(BDD)电极的COD在线监测装置和方法。
The invention belongs to the technical field of environmental monitoring, relating to COD on-line monitoring device and method based on a boron-doped diamond membrane (BDD) electrode.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
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