德国汉堡大学的昆德勒及其同事，也曾对砷化铟—属混合结构的EMR做过广泛的研究。
Dirk Grundler and his colleagues at Hamburg University in Germany have carried out extensive studies of EMR in indium arsenide-metal hybrid structures.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
应用推荐