克服因电子迁移率的漂移而带来的误差。
The invention overcomes error caused by excursion of the electron mobility.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。
The method can increase electron mobility between the startup state current and the channel area.
与实验比较，给出了隙态分布的位置、宽度和高度，也给出了电子迁移率和复合系数。
Compared with the experimental results, the position, width and peak of distribution of states in gap, and also the electron mobility, cross section ot capture are obtained.
应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。
The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
形变使电子的迁移率增大，从而可能提高电脑的速度以及降低功耗。
The deformation significantly increases electron mobility, making it possible to boost computer speed and reduce energy consumption.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
计算了二维无序系统的电子态密度、迁移率边界、局域化临界点以及直流电导率。
The local density of states (LDOS), the mobility edge, the localization critical value and the DE conductivity for two-dimensional disorder systems are calculated.
非计量掺杂碘时，空穴浓度大于电子浓度，载流子浓度和迁移率同时影响导电率。
In the calculated doped state, the concentration of the holes is larger than that of the electrons, the conductive ratio is influenced by both the carrier concentration and transferring.
当去除1/4波片2和3时，则能够测量电子电荷的双极扩散常数和迁移率。
When 1/4 wave plate 2 and 3 are removed, the ambipolar diffusion constant and mobility of electron charge can be measured.
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
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