浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
与漏极开路输出的六反相器。
沟道区域中的反型部分在到达漏极之前的夹断点终止。
The inverted portion of the channel region ends at a pinch-off point before reaching the drain.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
双重扩散漏极结构层用以作为一高压电容的下电极板。
The two-step diffusion drain electrode structural layer is used for serving as a lower electrode plate of a high-voltage capacitor.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
高压电容结构包括双重扩散漏极结构层、氧化层及多晶硅层。
The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
但同时也有一些不足，如漏极驱动能力降低以及寄生电容增大的问题。
But there are also some disadvantages, such as the reducing of drain current driving capability and the increasing of parasitic capacitance.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
本发明的实施例涉及一种静电放电防护装置、其制造方法及用于其的漏极。
Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
氧化层是形成于双重扩散漏极结构层上，且氧化层完全重叠于双重扩散漏极结 构层上。
The oxide layer is formed on the two-step diffusion drain electrode structural layer and completely superposed on the two-step diffusion drain electrode structural layer.
实验结果表明，这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。
Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.
在热载流子应力条件下，器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。
Under hot carrier stress, device degradation is the consequence of hot carrier induced defect generation locally at drain side.
针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
该晶体管还包括第一导电类型的漏极区，该漏 极区与不同于第一半导体区的第二半导体区电连通。
The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
作为开关器件，AMLCD中的TFT工作在饱和模式，其源极总是连接数据总线(视频)，漏极接像素电极。
As a switching device, TFT in AMLCD operates in saturation mode. Its source contact is always connected to the data bus (video), and the drain to the pixel electrode.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
在一种可替代的电路中，每个负载器件(M3,M4)的衬底都与它的漏极相连，并且被偏置在弱反型区工作。
In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
这个波形可以被看作是下列原理的叠加(图22和平台5)。全部这些波形的叠加整合结果变成图21所示的典型漏极电流。
This waveform can be presented as a superposition of the following elements (Fig. 22 and Tab. 5). The superposition of all these elements results in a typical drain current shown in Fig. 21.
当放置在横向器件的漏极或垂直器件的集电极中时，多晶填充的沟槽有效地放大了漏极或集电极区域，从而降低了导通电阻。
When placed in the drain of a lateral device or in the collector of a vertical device, the poly-filled trench effectively enlarges the drain or collector region, thereby lowering the ON-resistance.
且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。
Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
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