分析了氧化铟锡薄膜应用于玻璃领域隔热节能的前景。
The foreground of applying indium tin oxide film to heat-insulating and energy \ | saving in glass field has been analysed.
因此，氧化铟锡一维奈米结构有很大的潜力应用于光电元件系统。
Therefore, ITO nanowires may have potential applications for optoelectronic devices system.
采用溶胶-凝胶法，在氧化铟锡(ito)玻璃基质上制备氧化钨电致变色薄膜。
WO_ (3) electrochromic films were prepared on ITO glass substrates by the sol-gel method.
采用本发明的氧化锌透明电极取代传统的氧化铟锡透明电极，简化了制备工艺，降低了成本。
With the traditional tin indium oxide transparent electrode replaced by the zinc oxide transparent electrode of the invention, the manufacturing process is simplified and cost is lowered.
此拥有紫外光穿透率提升的氧化铟锡薄膜在目前紫外光光电组件的应用上是绝佳的选择之一。
Such an ITO film with enhanced ultraviolet (UV) transmittance has become an alternative candidate for applications in current UV photonic devices.
对氧化铟锡(ito)薄膜在光学太阳反射镜(osr)抗静电放电设计中的应用进行了研究。
The design principles of indium tin oxide film (ITO) applied to antistatic for optical solar reflector (OSR) have been studied.
分别将纳米氧化铝和纳米氧化铟锡加入到水性聚氨酯树脂中，改善了水性聚氨酯涂膜的耐磨性能和隔热性能。
The properties of abrasion resistance and thermal insulation of the waterborne polyurethane film were improved by the addition of nano-Al2O3 and nano-ITO respectively.
氧化铟锡(ito)膜的电阻率及表面粗糙度将影响有机电致发光器件(OLED)的发光效率及其使用寿命。
The resistivity and surface roughness of Indium tin oxide (ITO) films will affect the light-emitting efficiency and lifetime of the organic light-emitting diodes (OLED).
一种是氧化锡铟。
大多数的手机触屏是由铟锡氧化物(ito)制成的，铟锡氧化物的最大优点是它是透明的，但它也很昂贵。
Most touch screens in phones are now made with indium tin oxides (ITO). The ITO's greatest asset is that it's transparent, but it comes with a cost.
在他们的实验中，研究人员把石墨烯电极并入全功能触屏屏面，它们超出了铟锡氧化物电极的水平。
In their tests, researchers incorporated the graphene electrodes into a fully functional touch-screen panel, where they outperformed standard ITO electrodes.
铟锡氧化物超出寻常的昂贵，因为它是由珍贵的的原料构成的。
ITO is exceedingly expensive, because it's made of rare materials.
对太阳能电池板而言，电池面板内部的导体元件必须采用既透明，电导率又高的材料进行制作，目前用来制作这种导体元件的材料主要是铟和锡元素的氧化物 （ITO），不过ITO材料非常昂贵。
Conductors of electricity on solar panels ideally must be transparent and highly conductive. One solution currently used is indium tin oxide (ITO); however, ITO is very expensive.
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
报道了汞膜修饰掺锡三氧化二铟导电玻璃电极的制备及其薄层电化学池的设计，测试了电极和薄层池的光、电化学性能。
A tin doped indium trioxide conducting electrode coated with mercury film (Hg ITO) was obtained and an optically transparent thin layer electrochemical cell with Hg ITO as electrodes was designed.
研究发现，金属颜料的发射率一般较低，着色颜料的发射率一般都比较高，掺锡氧化铟(ito)半导体颜料红外发射率较低。
It finds that, in general, the emittance of metal pigments is lower, the emittance of coloring pigments is higher, and that of ITO pigments reported in the reference is lower.
铟锡氧化物(ito)是制造透明电极的重要材料。
ITO is important material of making the transparent electrode.
综述了纳米铟锡氧化物粉末的研究现状、制备技术、应用性能及其研究方向。
In this paper, current research progress, the preparation methods, applied properties and research orientation of nanometer Indium Tin Oxide (ITO) powders were discussed.
综述了铟锡氧化物（ITO）薄膜的生产技术概况及其发展趋势。
The technology survey and development tendency of ITO films were reviewed.
与所述有机层相接触的第一电极是用包含氧化钛的氧化锡铟制成的。
The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.
为了提高设备效率，当前主流光电子制备技术使用含有铟锡氧化物（ITO）的载体，然而这种材料价格昂贵并且不具有柔性。
Most current fabrication techniques in optoelectronics use carriers containing indium tin oxide (ITO) to achieve highly efficient devices. However, this material is expensive and unflexible.
对铟锡氧化物(I T O)薄膜的特性和应用，制备方法以及市场情况进行了综述。
The properties and applications, preparation and market situation of indium tin oxide (ITO) films were reviewed.
用化学共沉淀法制备了铟锡氧化物(ito)复合粉末。
ITO complex powders were synthesized by using chemical coprecipitation method.
研究结果表明，铟锡氧化物的相组成在很大程度上依赖于前驱体的相组成和煅烧温度。
It was found that the phase composition was mainly depended on their precursors' phase and annealing temperature.
研究结果表明，铟锡氧化物的相组成在很大程度上依赖于前驱体的相组成和煅烧温度。
It was found that the phase composition was mainly depended on their precursors' phase and annealing temperature.
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