在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。
The light HVDC transmission is a new power transmission technology based on the voltage source converters(VSCs) and IGBT power semiconductors.
三栅晶体管“鳍”映射到三维上，使得更多的晶体管放入到同一区域。
The Tri-Gate transistors have "fins" that project into the third dimension, above the plane of the chip, enabling even more transistors to be fit into the same area.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
介绍了一种能满足该要求的栅控行波管发射机通用浮动板调制器，阐述了其设计方法。
This paper introduces a kind of current floating-board modulator for grid control traveling-wave tube transmitter, which can satisfy the requirement, discusses the design method.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
对两种T型电子波导器件即遥控栅量子晶体管和中间栅量子晶体管进行了理论研究。
A theoretical analysis of a remote gate quantum transistor and a middle gate quant (?) m transistor based on a T-shape electron waveguide is presented.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
针对手工焊条电弧焊(MMA)弧焊过程特点，建立了绝缘栅型晶体管逆变式弧焊电源控制系统。
Based on the characteristics of MMA welding process, a new control system of IGBT inverter arc welding power source is developed.
采用吸附方法将TRAIL抗体制备在离子敏场效应管敏感栅上形成生物敏感膜。
The sensor uses protein A and TRAIL antibody sensitive membrane as the ISFET gate through absorbing process.
光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
采用自举模拟开关来提高开关管的栅过驱动电压。
The bootstrapped switch is used to improve the gate overdrive voltage.
过流保护电路将检测电流转化为栅压控制开关管；
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
通过对一种栅控行波管的测量，证明本系统可用来监测整管中阴极的活性。
It is proved that this system can also be used to monitor the property of the cathode in the assembled tube by measuring a grid controlled travelling-wave tube.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
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