在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
介绍了一种能满足该要求的栅控行波管发射机通用浮动板调制器，阐述了其设计方法。
This paper introduces a kind of current floating-board modulator for grid control traveling-wave tube transmitter, which can satisfy the requirement, discusses the design method.
过流保护电路将检测电流转化为栅压控制开关管；
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
采用自举模拟开关来提高开关管的栅过驱动电压。
The bootstrapped switch is used to improve the gate overdrive voltage.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
采用吸附方法将TRAIL抗体制备在离子敏场效应管敏感栅上形成生物敏感膜。
The sensor uses protein A and TRAIL antibody sensitive membrane as the ISFET gate through absorbing process.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
该线电压极性检测电路检测线电压的 极性且控制该驱动电路以导通或截止该栅控晶体管。
The line voltage polarity detection circuit detects the polarity of line voltage and controls the drive circuit to conduct or cut off the gate-controlled transistor.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
介绍了最新研制的幅相一致栅控耦合腔行波管的情况，并介绍脉冲相位一致性测试的方法和两支栅控幅相一致耦合腔行波管的功率合成结果。
A phase-amplitude-matched CCTWT has been developed. The power combination experiment of the phase amplitude-matched TWTs and the pulse phase measurement is described and analyzed in this paper.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。
The light HVDC transmission is a new power transmission technology based on the voltage source converters(VSCs) and IGBT power semiconductors.
针对手工焊条电弧焊(MMA)弧焊过程特点，建立了绝缘栅型晶体管逆变式弧焊电源控制系统。
Based on the characteristics of MMA welding process, a new control system of IGBT inverter arc welding power source is developed.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
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