晶圆片表面结构的主要方向。
擦伤-晶圆片表面的痕迹。
划伤-晶圆片表面上的小皱造成的缺陷。
Slip - A defect pattern of small ridges found on the surface of the wafer.
凹槽-晶圆片边缘上用于晶向定位的小凹槽。
Notch hAn indent on the edge of a wafer used for orientation purposes.
凹槽-晶圆片边缘上用于晶向定位的小凹槽。
Notch - An indent on the edge of a wafer used for orientation purposes.
测试晶圆片駦-用于生产中监测和测试的晶圆片。
Test wafer - a silicon wafer that is used in manufacturing for monitoring and testing purposes.
加工测试晶圆片䏐-用于区域清洁过程中的晶圆片。
Processs Test wafer - a wafer that can be used for processes as well as area cleanliness.
表面形貌剂-一种用来测量晶圆片表面形貌的工具。
Profilometer - a tool that is used for measuring surface topography.
耗尽层-晶圆片上的电场区域，此区域排除载流子。
Depletion Layer - a region on a wafer that contains an electrical field that sweeps out charge carriers.
蚀刻-通过化学反应或物理方法去除晶圆片的多余物质。
Etch - a process of chemical reactions or physical removal to rid the wafer of excess materials.
质量保证区（FQA）-晶圆片表面中央的大部分。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
底部硅层ꢃ-在绝缘层下部的晶圆片，是顶部硅层的基础。
Base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
总计指示剂数(ir)-晶圆片表面位面间的最短距离。
Total Indicator Reading (TIR) - the smallest distance between planes on the surface of the wafer.
原始测试晶圆片㠰-还没有用于生产或其他流程中的晶圆片。
Virgin test wafer - a wafer that has not been used in manufacturing or other processes.
晶圆片搀杂剂可以在元素周期表的III和V族元素中发现。
Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
雾度-晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Haze - a mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
已经设计出专门的探头来测量半导体晶圆片和半导体棒的电阻率。
Special probes have been designed for making resistivity measurements on semiconductor wafers and bars.
研究人员目前正在扩展他们的工作，将单层石墨烯迁移到硅晶圆片上。
The researchers are now extending their work to single graphene sheets that have been transferred onto silicon wafers.
表面起伏ꊝ-在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Dimple eA concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
另一些对于晶圆片级半导体的弱电流测量则通常与介电材料(氧化物或化合物)的质量有关。
Other typical low current measurements on wafer level semiconductors are related to the dielectric, either the oxide or compound quality.
因此，在半导体行业中，必须快速、准确地对硅晶圆片导电类型、方块电阻和电阻率进行判断、测量和分档。
Therefore, in the semiconductor industry, we must quickly and accurately type conductive film on silicon wafers, the square resistance and resistivity of judgement, measurement, and grading.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chemical-Mechanical polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
需要注意的是，上面所说的200mm规格产线计划6月15日恢复量产，此日期指的是工厂可以开始接受200mm晶圆片开始加工的日期，而从晶圆片上制出芯片并对其进行封装，制成可以直接销售给客户的成品，则可能需要再等上2.5-3个月。
The June 15 date is a wafers-in start date. It can take up to three months for a wafer to be processed and packaged for shipment to customers.
半导体晶圆背面加工方法，衬底背面加工方法，和辐射固化型压敏粘着片。
Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet.
硅晶圆大圆片上切割而成的一个小片半导体材料。
Die: a single piece of semiconductor material that has been cut from a slice by scribing and breaking.
集成电路粘片机是将半导体晶圆上微芯片贴装到引线基架的半导体制造后工序关键性生产设备。
IC Die Bonder is key equipment which binds semiconductor microchip onto Lead Frame in semiconductor back-end production.
在晶圆与承片台存在不同偏移量时，利用线性差分传感器在线测量晶圆上不同点的局部高度；
The local heights of wafer surface are measured by the linear variable differential transformer (LVDTs) when the different offsets between wafer and wafer chuck exist.
在晶圆与承片台存在不同偏移量时，利用线性差分传感器在线测量晶圆上不同点的局部高度；
The local heights of wafer surface are measured by the linear variable differential transformer (LVDTs) when the different offsets between wafer and wafer chuck exist.
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