逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
这就是说，电路并不在晶体管层次进行设计，而是在门电路、触发器和存储模块的级别进行设计的。
This means, that the circuit is not designed on the level of transistors , but on the level of gates, flips-flops.
随意地，如果用锗晶体管取代硅晶体管，可使模块工作的输入电压最小为0.25V。
Optionally, the modules can operate with input voltages as low as 0.25v if you replace the silicon transistors with germanium devices.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
一个主要的研究方向是以碳纳米管为模块，采用自下而上的构筑方式制备纳电子器件（包括晶体管、传感器等）。
One of the important research directions is the fabrication of nano electrical devices including transistor and sensor by bottom-up method using carbon nanotubes as building block.
一个主要的研究方向是以碳纳米管为模块，采用自下而上的构筑方式制备纳电子器件（包括晶体管、传感器等）。
One of the important research directions is the fabrication of nano electrical devices including transistor and sensor by bottom-up method using carbon nanotubes as building block.
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