在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。
For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法。
Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
第一，在场效应晶体管关断期间钳位电压是800伏特，高于600伏特。
First, the clamping voltage during the MOSFETs turning off is 800V, what is higher then of 600V.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。
Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.
供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级，两绕组的全部组合可构成18个不同扎数的次级。
The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文介绍了应用电荷抽取效应测量MOS晶体管中少子复合寿命的方法。
A method is presented for measuring the minority recombination Lifetime in MOS fet's by charge pumping effect.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
半导体器件。分立器件和集成电路。第8部分：场效应晶体管。
Semiconductor devices. Discrete devices and integrated circuits. Part 8: field-effect transistors.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
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