... transilog 晶体管逻辑电路 transistance 晶体管效应 transistor amplifier 晶体管放大器 ...
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... transistor deterioration 晶体管劣化 transistor effect 晶体管效应 transistor electronics 晶体管电子学 ...
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场效应晶体管场效应管 field effect transistor
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则,但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
举例说明,20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。
For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
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