掺杂半导体线连接至一行存储单元。
The doped semiconductor line is coupled to a row of memory cells.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
Finally, the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
现有的激光器使用的介质有，掺杂有稀土元素的晶体、特定比例的气体，甚至是某些特定半导体。
Existing lasers use media ranging from crystals doped with rare-earth elements to specific mixtures of gas and even certain sorts of semiconductors.
第一步策略是一个在芯片产业上普遍使用的技术，叫做“掺杂”，就是在半导体晶体中加入其它元素的原子。
Their first strategy is a technique, common in chip manufacturing, called doping, in which atoms of some other element are added to a semiconductor crystal.
本文提出了一种新的半导体掺杂方法。
A new method for impurity doping of semiconductor has been developed.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
掺杂是制备硅纳米线半导体器件的一个有效手段。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
本文应用统计物理的方法，讨论了非晶半导体的掺杂效应，特别是在低温下的特性。
This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics.
随着掺杂浓度的增大，该体系逐渐从半导体特性向导体方向转变。
When doping concentration is increased, the system turns its semiconductor into conducting characteristics.
导电聚合物半导体的最大特点是掺杂物在工作条件下可以移动。
Sunlight may be converted into electrical or chemical energy by semiconductors composed of suitably doped polymers (e. g. polyaeetylene) .
本文研究了半导体掺杂复合材料微结构的各向异性对材料的光学非线性增强的影响。
The effect of anisotropic microstructure of semiconductor composites on the optical nonlinearity enhancement is investigated.
本文讨论半导体掺杂薄层的数据特性和质量管理方法。
This paper describes the data character of semiconductor dopants and the quality control method.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
掺杂一个纯半导体的产品。
对于半导体材料，有利地可以使用铟合金，而对于掺杂材料，可以使用硒或碲。
As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used.
对于半导体型(8,4)管，由于其管径较大，氮原子掺杂对其影响相对较小。
Because of large diameter, doping of nitrogen atoms make a little impact on the chiral (8, 4) CNTs.
该镍离子掺杂的氧化镉基稀磁半导体纳米材料存在形态为纳米粉末和纳米薄膜。
The existence mode of the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material is the nano powder and the nano film.
文中给出了半导体掺杂玻璃微晶尺寸与量子限效应的关系。
The relation between the microcrystal size and quantum-confined effect was obtained.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
在掺杂过程中样品有时表现为金属性，有时表现为半导体性质，跟掺杂量有关。
The samples can be either metallic or semiconducting, depending on the amount of intercalted Eu atoms.
在掺杂过程中样品有时表现为金属性，有时表现为半导体性质，跟掺杂量有关。
The samples can be either metallic or semiconducting, depending on the amount of intercalted Eu atoms.
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