掺杂半导体线连接至一行存储单元。
The doped semiconductor line is coupled to a row of memory cells.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
Finally, the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
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