寄主标记信息素也会给释放着带来不利的影响，如信息盗用和盗寄生现象等。
Host marking pheromones sometimes may bring adverse effects on the releaser, such as eavesdropping and cleptoparasitism.
HPC器件的独特结构减少了由于PC B上的互连线路缩短而引起的寄生现象，并通过缩短组件间的距离提高了电路性能。
HPC devices 'unique construction reduces parasitics by shortening interconnecting traces on PCBs and improves circuit performance by decreasing the distance between components.
在青少年以及处于怀孕初期阶段的妇女中食土现象最为普遍，因为这两者都极易受到寄生虫以及病原体的侵害。
Dirt is most commonly eaten by women in early stages of pregnancy and preadolescent children. Both are particularly at risk from parasites and pathogens.
对于交易近年来青云直上的现象，TED回忆说，“他们会说，'你们才是真正的寄生虫，享受昂贵的午餐，在我们的交易操作幕后处理案子。'”
As the traders came out on top in recent years, TED recalled, “they would say, ‘You guys are the real parasites, going to expensive lunches and doing deals on the back of our trading operations.’
本论文建立了包含电磁现象以及对电感性能有重要影响的寄生电阻和寄生电容的物理模型。
This dissertation presents physical models that address the electromagnetic phenomena and parasitics important to the behavior of on-chip inductors.
寄生虫的遗传变异现象十分普遍，用P CR - RFLP技术精确分析寄生虫遗传变异的研究意义重大。
As the inheritance variation is universal in parasites, the precise research with PCR-RFLP in parasites is of importance.
研究了开关电源中印刷电路板寄生参数及功率器件瞬态特性产生的传导电磁干扰现象。
Conducting Electromagnetic Interference (EMI) in switching power supplies caused by parasitic parameters and transient characteristic of power electronic elements is studied in this paper.
这些现象说明寄生对寄主的脂肪体结构及脂肪细胞产生了明显的影响，这有利于为幼蜂的发育提供营养。
It is so concluded that parasitism by parasitoid can make host fat body and adipocytes fell to pieces, and this is advantageous for development of parasitoid.
动态范围达到60分贝。 电晕现象将受到抑制，饱和电平寄生信号可得到消除。
The dynamic range reached to 60 dB. The blooming is suppressed completely and the saturation-level shading can be removed.
在青少年以及处于怀孕初期阶段的妇女中食土现象最为普遍，因为这两者都极易受到寄生虫以及病原体的侵害。
Dirt is most commonly eaten by women in early stages OS pregnancy and preadolescent children. Both are particularly at risk from parasites and pathogens.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
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