在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
衬底型ISFET是一种化学敏感器件。
半导体晶圆背面加工方法，衬底背面加工方法，和辐射固化型压敏粘着片。
Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
包括N型体晶硅体颗粒（01），铝衬底 （02），中间绝缘层（05），表面透明导电层（06）和减反射层（07）构成。
The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).
为了实现射频传输线的薄衬底结构，根据共面波导的设计思想，设计了腔体式共面波导型射频微机械开关。
In order to realize thin dielectric structure of the transmission line and combined the principle of the design of CPW, a cavity structure has also been studied.
这种产品得以开发是由于采用了薄型外部衬底，该衬底是由改进的增强陶瓷材料制造的。
This development has been made possible by the adoption of a thin exterior substrate made of an improved ceramic material that provides enhanced strength.
本文提出了一种新型的硅基衬底体硅加工安培型微电极生物传感器。
A new silicon-based bulk micro-machined amperometric microelectrode biosensor is designed and fabricated with anisotropic silicon wet etching.
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在一种可替代的电路中，每个负载器件(M3,M4)的衬底都与它的漏极相连，并且被偏置在弱反型区工作。
In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
在一种可替代的电路中，每个负载器件(M3,M4)的衬底都与它的漏极相连，并且被偏置在弱反型区工作。
In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
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