... n type semiconductor n 型半导体 n type substrate n 型衬底 n well cmos process n 阱互补金属氧化物半导体工艺 ...
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耗尽型衬底晶体管 depleted substrate transistor
称为耗尽型衬底晶体管 depleted substrate transistor ; DST
使用耗尽型衬底晶体管 depleted substrate transistor ; DST
成对槽型衬底多量子阱 pair-groove-substrate multiquantum well
型槽硅衬底 v groove silicon substrate ; vgroovesiliconsubstratev
V型槽衬底 V-channeled substrate
衬底类型 substrate type
在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
衬底型ISFET是一种化学敏感器件。
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