研究了基于场效应晶体管的DNA传感器。
本发明应用于提高场效应晶体管的制造效率。
The invention is applied to improving the manufacture efficiency of the field effect transistor.
场效应晶体管以及制造场效应晶体管的方法。
A field effect transistor and a method of fabricating the field effect transistor.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
半导体器件。分立器件和集成电路。第8部分：场效应晶体管。
Semiconductor devices. Discrete devices and integrated circuits. Part 8: field-effect transistors.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
用极性小分子苏氨酸溶液作为活性物质制作液态有机场效应晶体管。
We focus our investigation on liquid-state OFET fabricated from dissolved L-Threonine acting as active material, which is known to be a polarizable chemical.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明提供一种以碳纳米管为电极的场效应晶体管器件及其制备方法。
The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.
第一，在场效应晶体管关断期间钳位电压是800伏特，高于600伏特。
First, the clamping voltage during the MOSFETs turning off is 800V, what is higher then of 600V.
这种聚噻吩材料可以应用在有机场效应晶体管、聚合物太阳能电池等领域。
The thiofuran derivation material can be used in organic field-effect-transistor, polymer solar battery field, and so on.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
只有载体侧FET(场效应晶体管)开关需要电源，载体本身基本上不需要电源。
As we need only electrical power for FET switching on the carrier side, power supply system for carrier is basically not needed.
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法。
Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
然而，有机场效应晶体管性能的快速进步，主要得益于新型有机半导体材料方面的研究进展。
However, the rapid improvements of OFET's performances mostly profit from research achievements in new organic semiconductor materials.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
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