单电子晶体管是几年前才发现的一种功能奇特的新型器件。
The single-electron transistor is a kind of newly found fascinating device in recent years.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
基于单电子系统半经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点。
According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge.
基于单电子系统半经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点。
According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge.
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