半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
电压测量方法，电测试方法和装置，半导体器件制造方法和器件衬底制造方法。
Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate.
目前，利用半导体器件制造过程中的蚀刻技术，在实验室中已制造出亚微米级的机械元件。
At present, the semiconductor devices used in the manufacturing process of etching technology, in the lab has produced sub-micron mechanical components.
它直接反映了材料的质量和器件特性。能够准确的得到这个参数，对于半导体器件制造具有重要意义。
It reflects the quality of materials and performance of devices, so it is necessary to get this parameter accurately.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
该处半导体制造技术研究中心则是镁光体系中负责为亚洲的智能手机及消费电子器件厂商提供技术支持的重要环节之一。
Micron Semiconductor Technology is a key hub in Micron's network for providing support to a variety of Asia-based mobile phone and consumer electronic device manufacturers.
这种技术也需要半导体公司和其他科技公司与汽车制造商的更大合作，才能创造更适合的器件和技术。
Such technologies also require greater cooperation between semiconductor and other technology companies with car manufacturers to enable creation of suitable devices and technologies.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
本发明的目的是提供一种半导体器件，具体地，提供一种可通过湿法容易地制造的发光元件。
It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method.
本发明提供一种半导体器件及其制造方法。
Provided are a semiconductor device and a method of manufacturing the same.
此外，本发明的目的是提供小尺寸、薄型且重量轻的半导体器件的制造方法。
Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight.
本发明涉及一种半导体器件的制造方法。
The invention relates to a manufacturing method of semiconductor device.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
本发明公开了一种半导体器件及其制造方法。
Disclosed are a semiconductor device and a manufacturing method thereof.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
半导体膜，半导体器件，和制造方法。
本发明提供用于ULSI半导体器件的具有自组装单分子层的铜线及其制造方法。
A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented.
在半导体工业，制造结构尺寸小于70纳米器件的能力允许器件的持续微型化。
The ability to fabricate structures with dimension less than 70nm allow the continuation of miniaturization of devices in the semiconductor industry.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
焊料膜制造方法，装备有焊料膜的散热装置，以及半导体器件与散热装置的连接体。
Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.
半导体器件（10）被制造在半导体层（12）上。
The semiconductor device (10) is made over a semiconductor layer (12).
本发明披露了一种半导体器件及其制造方法。
A semiconductor device and a method for fabricating the same are disclosed.
本发明公开了一种半导体器件阱的制造方法，涉及半导体前道的制造工艺。
The invention discloses a process for preparing a well of a semiconductor device, which relates to the fabrication technology of a former semiconductor.
用有机半导体、导体材料制造出各种电子器件、光电器件、光学器件的梦想正在逐步变为现实。
The dream of using semiconducting and metallic polymers for fabricating novel photonic devices, electronic devices, and optical devices is becoming reality.
用有机半导体、导体材料制造出各种电子器件、光电器件、光学器件的梦想正在逐步变为现实。
The dream of using semiconducting and metallic polymers for fabricating novel photonic devices, electronic devices, and optical devices is becoming reality.
应用推荐