本文首先详细介绍了分子束外延设备的原理和构造。
Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.
本文报道了金属有机源分子束外延设备的设计方案和技术特点。
The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
此外，分子束外延生长、激光消融等制备方法也有一定的应用。
In addition, such preparation methods as molecular beam epitaxy and laser ablation also see some applications.
最后介绍了分子束外延技术在光电子器件方面应用的最新进展。
The recent progress in the applications of the MBE techniques to optoelectronic devices is finally presented.
本文报道了一台用于物理研究的分子束外延模拟实验装置的设计和调试。
In this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。
These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.
瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
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